modulators - smt 8 8 - 14 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com sige wideband direct modulator rfic, 4.0 - 7.0 ghz v03.0206 hmc496lp3 / 496lp3e general description features functional diagram the hmc496lp3 & HMC496LP3E are low noise wideband direct quadrature modulator rfics which are ideal for digital modulation applications from 4.0 - 7.0 ghz including; wll, u-nii, wlan & microwave radios. housed in a compact 3x3 mm (lp3) smt qfn package, the rfic requires minimal ex-ternal components & provides a low cost alternative to more complicated double upconversion architec- tures. the rf output port is matched to 50 ohms with no external components. the lo requires -3 to +6 dbm and can be driven in either differential or single- ended mode while the baseband inputs will support modulation inputs from dc - 250 mhz typical. this device is optimized for a supply voltage of +3.0v@ 93 ma and will provide stable performance over a +2.7v to +3.3v range. wideband rf frequency range high carrier suppression: 34 dbc very low noise floor: -157 dbm/hz low lo power: -3 to +6 dbm differential or single ended lo drive single low current supply: +3.0v@ 93 ma 3 x 3 mm qfn smt plastic package typical applications the hmc496lp3 / HMC496LP3E is suitable for various modulation systems: ? fixed wireless or wll ? u-nii radios ? 802.11a & hiperlan wlan ? c-band microwave radios electrical specifications, see test conditions on following page herein. parameter min. typ. max. min. typ. max. min. typ. max. units frequency range, rf 4.9 - 5.4 5.7 - 5.9 5.9 - 6.4 ghz output power -1 +2 -1 +2 -2 +1 dbm output p1db 3 4 4 dbm output ip3 15 18 14 17 14 17 dbm output noise floor -157 -156 -155 dbm/hz carrier suppression (uncalibrated) 34 34 31 dbc sideband suppression (uncalibrated) 40 39 39 dbc im3 suppression 45 42 41 dbc rf port return loss 7 9 8 db lo port return loss 11 10 10 db
modulators - smt 8 8 - 15 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com electrical specifications, (continued) parameter conditions min. typ. max. units rf output rf frequency range 4.0 7.0 ghz rf return loss 8db lo input lo frequency range 4.0 7.0 ghz lo input power -3 +3 +9 dbm lo port return loss 10 db baseband input port baseband port bandwidth with 50 source & external 10 pf shunt cap to ground. refer to hmc496lp3 application circuit. dc 250 mhz baseband input dc voltage (vbbdc) this parameter can be varied in order to optimize the device performance over temperature and/or supply. 1.0 1.3 1.6 v baseband input dc bias current (ibbdc) single-ended 32 a baseband input capacitance single-ended. de-embeded to the part pin. 0.8 pf dc power requirements see test conditions below supply voltage (vcc) 2.7 3.0 3.3 v supply current (icc) 93 ma test conditions: unless otherwise specified, the following test conditions were used calibrated vs. uncalibrated test results during the uncalibrated sideband and carrier suppression tests, care is taken to ensure that the i/q signal paths from the vector signal generator (vsg) to the device under test (dut) are equal. the uncalibrated, +25 c sideband and carrier suppression plots were measured at room temperature, while the uncalibrated, over temperature sideband and carrier suppression plots represent the worst case uncalibrated suppression levels measured at t= -40 c, +25 c, and +85 c. the calibrated, +25 c sideband suppression data was plotted after a manual adjustment of the i/q amplitude balance and i/q phase offset (skew) at +25c, and an lo input power level of + 3 dbm. this adjustment setting was held constant during tests over lo input power level and temperature. the calibrated, over temperature plots represent the worst case calibrated sideband suppression levels at t= -40 c, +25 c, and +85 c. the calibrated, +25 c carrier suppression data was plotted after a manual adjustment of the ip/in & qp/qn dc offsets at +25 c, and an lo input power level of + 3 dbm. this adjustment setting was held constant during tests over lo input power level and temperature. the calibrated, over temperature plots represent the worst case carrier suppression levels measured at t= -40 c, +25 c, and +85 c. parameter condition temperature +25 c baseband input frequency 200 khz baseband input dc voltage (vbbdc) 1.3v baseband input ac voltage (peak to peak differential, i and q) 1.2v baseband input ac voltage for oip3 measurement (peak to peak differential, i and q) 600 mv per tone @ 150 & 250 khz frequency offset for output noise measurements 20 mhz supply & bias voltage (vb1, vb2, vcc1, vcc2) +3.0v lo input power +3 dbm lo input mode single-ended mounting con guration refer to hm c496lp3 application schematic herein sideband & carrier suppression uncalibrated rf output mode differential sige wideband direct modulator rfic, 4.0 - 7.0 ghz v03.0206 hmc496lp3 / 496lp3e
modulators - smt 8 8 - 16 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com wideband performance vs. frequency output noise floor and p1db vs. frequency output ip3 vs. frequency return loss -170 -165 -160 -155 -150 -145 -140 -135 -130 -125 -120 -3 -2 -1 0 1 2 3 4 5 6 7 4 4.5 5 5.5 6 6.5 7 noise (dbm/hz) output p 1 db (db m ) frequency (ghz) output p1db output noise floor set-up noise floor 5 10 15 20 25 4 4.5 5 5.5 6 6.5 7 output ip3 (dbm) frequency (ghz) -15 -10 -5 0 4 4.5 5 5.5 6 6.5 7 lop single ended rfp single ended return loss (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 10 4 4.5 5 5.5 6 6.5 7 frequency (ghz) output power sideband suppression carrier suppression 3rd harmonic output power (dbm), sideband suppr. (dbc), carrier suppr. (dbc), 3rd harmonic (dbc) sige wideband direct modulator rfic, 4.0 - 7.0 ghz v03.0206 hmc496lp3 / 496lp3e
modulators - smt 8 8 - 17 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com output noise vs. lo power over temperature@ 5200 mhz output noise vs. lo power over supply@ 5200 mhz sideband suppression* vs. lo power@ 5200 mhz carrier suppression* vs. lo power@ 5200 mhz output ip3 & output power vs. lo power over temperature@ 5200 mhz output ip3 & output power vs. lo power over supply@ 5200 mhz * see note regarding calibrated vs. uncalibrated test results herein. -10 -5 0 5 10 15 20 -3 -2 -1 0 1 2 3 -3-2-10123456789 +25 c +85 c -40 c output ip3 (dbm) output power (dbm) lo power (dbm) -10 -5 0 5 10 15 20 -3 -2 -1 0 1 2 3 -3-2-10123456789 +2.7 v +3.0 v +3.3 v output ip3 (dbm) output power (dbm) lo power (dbm) -170 -165 -160 -155 -150 -145 -140 -3-2-10123456789 +25 c +85 c -40 c output noise floor (dbm/hz) lo power (dbm) -170 -165 -160 -155 -150 -145 -140 -3-2-10123456789 +2.7 v +3.0 v +3.3 v output noise floor (dbm/hz) lo power ( dbm ) -60 -50 -40 -30 -20 -3-2-10123456789 sideband suppression (dbc) lo power (dbm) uncalibrated, +25c calibrated, over temp uncalibrated, over temp calibrated, +25c -60 -50 -40 -30 -20 -3-2-10123456789 uncalibrated, +25c calibrated, +25c uncalibrated, over temp calibrated, over temp carrier suppression (dbc) lo power (dbm) sige wideband direct modulator rfic, 4.0 - 7.0 ghz v03.0206 hmc496lp3 / 496lp3e
modulators - smt 8 8 - 18 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com output noise vs. lo power over temperature@ 5800 mhz output noise vs. lo power over supply@ 5800 mhz sideband suppression* vs. lo power@ 5800 mhz carrier suppression* vs. lo power@ 5800 mhz output ip3 & output power vs. lo power over temperature@ 5800 mhz output ip3 & output power vs. lo power over supply@ 5800 mhz -10 -5 0 5 10 15 20 -2 -1 0 1 2 3 4 -3-2-10123456789 +25 c +85 c -40 c output ip3 (dbm) output power (dbm) lo power (dbm) -10 -5 0 5 10 15 20 -2 -1 0 1 2 3 4 -3-2-10123456789 +2.7 v +3.0 v +3.3 v output ip3 (dbm) output power (dbm) lo power (dbm) -170 -165 -160 -155 -150 -145 -140 -3-2-10123456789 +25 c +85 c -40 c output noise floor (dbm/hz) lo power ( dbm ) -170 -165 -160 -155 -150 -145 -140 -3-2-10123456789 +2.7 v +3.0 v +3.3 v output noise floor (dbm/hz) lo power (dbm) -60 -50 -40 -30 -20 -3-2-10123456789 uncalibrated, +25c calibrated, +25c uncalibrated, over temp calibrated, over temp sideband suppression (dbc) lo power (dbm) -60 -50 -40 -30 -20 -3-2-10123456789 uncalibrated, +25c calibrated, +25c uncalibrated, over temp calibrated, over temp carrier suppression (dbc) lo power (dbm) sige wideband direct modulator rfic, 4.0 - 7.0 ghz v03.0206 hmc496lp3 / 496lp3e
modulators - smt 8 8 - 19 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com absolute maximum ratings vcc -0.5 to +6.0v lo input power +10 dbm baseband input voltage (reference to gnd) -0.5 to +2.0v channel temperature 150 c continuous pdiss (t = 85c) (derate 110 mw/c above 85c) 7 watts thermal resistance (r th ) (junction to lead) 9 c/watt storage temperature -40 to +150 c operating temperature -40 to +85 c outline drawing electrostatic sensitive device observe handling precautions part number package body material lead finish msl rating package marking [3] hmc496lp3 low stress injection molded plastic sn/pb solder msl1 [1] 496 xxxx HMC496LP3E rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] 496 xxxx [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c [3] 4-digit lot number xxxx package information notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters]. 3. lead spacing tolerance is non-cumulative 4. pad burr length shall be 0.15mm maximum. pad burr height shall be 0.05mm maximum. 5. package warp shall not exceed 0.05mm. 6. all ground leads and ground paddle must be soldered to pcb rf ground. 7. refer to hittite application note for suggested pcb land pattern. sige wideband direct modulator rfic, 4.0 - 7.0 ghz v03.0206 hmc496lp3 / 496lp3e
modulators - smt 8 8 - 20 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pin number function description interface schematic 1, 4, 9, 12 gnd these pins and the ground paddle must be connected to a high quality rf/dc ground. 2, 3 lop, lon differential lo input ports. this device may be driven in either differential or single ended mode. in single ended mode, one port should be driven by the lo source while the other port may be terminated with a 50 resistor to ground. 5, 8, 13 n/c no connection required. these pins may be connected to rf/ dc ground without affecting performance. 6, 7 qn, qp differential quadrature baseband input. these are high impedance ports. the nominal recommended bias voltage is between 1.2 - 1.4v. the nominal recommended baseband input voltage is 1.2v peak to peak differential. by adjusting the dc bias voltage on ports qn & qp, the carrier suppression of the device can be optimized for a speci c frequency band and lo power level. the typical offset voltage for optimization is less than 15 mv. the amplitude and phase difference between the i and q inputs can be adjusted in order to optimize the sideband suppression for a speci c frequency band and lo power level. 10, 11 rfn, rfp rf output port. this port is matched to 50 ohms. a series capacitor should be connected to this port in order to prevent the dc supply voltage from appearing on the customers pc board. 14, 15 ip, in differential quadrature baseband input. these are high impedance ports. the nominal recommended bias voltage is between 1.2 - 1.4v. the nominal recommended baseband input voltage is 1.2v peak to peak differential. by adjusting the dc bias voltage on ports in & ip, the carrier suppression of the device can be optimized for a speci c frequency band and lo power level. the typical offset voltage for optimization is less than 15 mv. the amplitude and phase difference between the i and q inputs can be adjusted in order to optimize the sideband suppression for a speci c frequency band and lo power level. 16 vcc supply voltage. set to 3.0v for nominal operation. the nominal current for this port is 93 ma. pin descriptions sige wideband direct modulator rfic, 4.0 - 7.0 ghz v03.0206 hmc496lp3 / 496lp3e
modulators - smt 8 8 - 21 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com item description j1 - j8 pcb mount sma connector j9 dc molex connector c1, c2, c5, c6 100 pf chip capacitor, 0402 pkg. c9 10k pf chip capacitor, 0402 pkg. c3, c4, c7, c8 10 pf chip capacitor, 0402 pkg. c15 4.7 uf, case a, tantulum u1 hmc496lp3 / HMC496LP3E modulator pcb [2] 107309 eval board [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 evaluation pcb the circuit board used in the nal application should use rf circuit design te chniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be con- nected directly to the ground plane similar to that shown. a suf cient number of via holes should be used to connect the top and bottom ground planes. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 107871 [1] sige wideband direct modulator rfic, 4.0 - 7.0 ghz v03.0206 hmc496lp3 / 496lp3e
modulators - smt 8 8 - 22 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application & evaluation pcb schematic note: baseband input frequency range is dependent on value of c3, c4, c7 and c8. the value of 10 pf was chosen to give a typical response of dc - 250 mhz. input frequency range can be extended up to 1 ghz with possible degradation of lo leakage and broadband noise oor response by decreasing the value of c3, c4, c7 & c8. sige wideband direct modulator rfic, 4.0 - 7.0 ghz v03.0206 hmc496lp3 / 496lp3e
modulators - smt 8 8 - 23 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com characterization set-up sige wideband direct modulator rfic, 4.0 - 7.0 ghz v03.0206 hmc496lp3 / 496lp3e
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